The use of a surfactant (Sb) to induce triple period ordering in GaInP
Identifieur interne : 012282 ( Main/Repository ); précédent : 012281; suivant : 012283The use of a surfactant (Sb) to induce triple period ordering in GaInP
Auteurs : RBID : Pascal:00-0113386Descripteurs français
- Pascal (Inist)
- 6835R, 6835B, 6855J, 8105E, 8115G, 7120P, Etude expérimentale, Gallium phosphure, Indium phosphure, Agent surface, Epitaxie phase vapeur, Structure électronique, Analyse chimique structurale, Photoluminescence, Diffraction électron, Bande interdite, Gallium composé, Indium composé, Semiconducteur III-V, Reconstruction surface, Paramètre cristallin, Couche épitaxique semiconductrice.
English descriptors
- KwdEn :
- Electron diffraction, Electronic structure, Energy gap, Experimental study, Gallium compounds, Gallium phosphides, III-V semiconductors, Indium compounds, Indium phosphides, Lattice parameters, MOCVD coatings, Photoluminescence, Semiconductor epitaxial layers, Structural chemical analysis, Surface reconstruction, Surfactants, VPE.
Abstract
A surfactant is used to induce an ordered structure in an epitaxial layer. The addition of small amounts of triethylantimony during the organometallic vapor phase epitaxy growth of GaInP on (001) GaAs substrates is shown to remove CuPt ordering with a resultant increase in band gap energy. Increasing the concentration of Sb in the vapor beyond a critical Sb to P ratio [Sb/P(v)] of 4×10-4 gives a reversal of this behavior. The band gap energy is observed to decrease by 50 meV at a concentration of Sb/P(v)=1.6×10-3, coincident with the formation of an ordered phase with a period triple the normal lattice spacing along the [111] and [111] directions. The formation of this new ordered structure is believed to be related to high concentrations of Sb on the surface, which leads to a change in the surface reconstruction from (2×4)-like to (2×3)-like, as indicated by surface photoabsorption performed in situ. © 2000 American Institute of Physics.
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Lee</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>College of Engineering, University of Utah, Salt Lake City, Utah 84112</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Utah</region></placeName><wicri:cityArea>College of Engineering, University of Utah, Salt Lake City</wicri:cityArea></affiliation></author><author><name sortKey="Shurtleff, J K" uniqKey="Shurtleff J">J. K. Shurtleff</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>College of Engineering, University of Utah, Salt Lake City, Utah 84112</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Utah</region></placeName><wicri:cityArea>College of Engineering, University of Utah, Salt Lake City</wicri:cityArea></affiliation></author><author><name sortKey="Stringfellow, G B" uniqKey="Stringfellow G">G. B. 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Seong</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Kwanju Institute of Science and Technology, Kwanju 500-712, Korea</s1><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country xml:lang="fr">Corée du Sud</country><wicri:regionArea>Kwanju Institute of Science and Technology, Kwanju 500-712</wicri:regionArea><wicri:noRegion>Kwanju 500-712</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">00-0113386</idno><date when="2000-03-13">2000-03-13</date><idno type="stanalyst">PASCAL 00-0113386 AIP</idno><idno type="RBID">Pascal:00-0113386</idno><idno type="wicri:Area/Main/Corpus">013977</idno><idno type="wicri:Area/Main/Repository">012282</idno></publicationStmt><seriesStmt><idno type="ISSN">0003-6951</idno><title level="j" type="abbreviated">Appl. phys. lett.</title><title level="j" type="main">Applied physics letters</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Electron diffraction</term><term>Electronic structure</term><term>Energy gap</term><term>Experimental study</term><term>Gallium compounds</term><term>Gallium phosphides</term><term>III-V semiconductors</term><term>Indium compounds</term><term>Indium phosphides</term><term>Lattice parameters</term><term>MOCVD coatings</term><term>Photoluminescence</term><term>Semiconductor epitaxial layers</term><term>Structural chemical analysis</term><term>Surface reconstruction</term><term>Surfactants</term><term>VPE</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>6835R</term><term>6835B</term><term>6855J</term><term>8105E</term><term>8115G</term><term>7120P</term><term>Etude expérimentale</term><term>Gallium phosphure</term><term>Indium phosphure</term><term>Agent surface</term><term>Epitaxie phase vapeur</term><term>Structure électronique</term><term>Analyse chimique structurale</term><term>Photoluminescence</term><term>Diffraction électron</term><term>Bande interdite</term><term>Gallium composé</term><term>Indium composé</term><term>Semiconducteur III-V</term><term>Reconstruction surface</term><term>Paramètre cristallin</term><term>Couche épitaxique semiconductrice</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">A surfactant is used to induce an ordered structure in an epitaxial layer. The addition of small amounts of triethylantimony during the organometallic vapor phase epitaxy growth of GaInP on (001) GaAs substrates is shown to remove CuPt ordering with a resultant increase in band gap energy. Increasing the concentration of Sb in the vapor beyond a critical Sb to P ratio [Sb/P(v)] of 4×10<sup>-4</sup> gives a reversal of this behavior. The band gap energy is observed to decrease by 50 meV at a concentration of Sb/P(v)=1.6×10<sup>-3</sup>, coincident with the formation of an ordered phase with a period triple the normal lattice spacing along the [111] and [111] directions. The formation of this new ordered structure is believed to be related to high concentrations of Sb on the surface, which leads to a change in the surface reconstruction from (2×4)-like to (2×3)-like, as indicated by surface photoabsorption performed in situ. © 2000 American Institute of Physics.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0003-6951</s0></fA01><fA02 i1="01"><s0>APPLAB</s0></fA02><fA03 i2="1"><s0>Appl. phys. lett.</s0></fA03><fA05><s2>76</s2></fA05><fA06><s2>11</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>The use of a surfactant (Sb) to induce triple period ordering in GaInP</s1></fA08><fA11 i1="01" i2="1"><s1>FETZER (C. M.)</s1></fA11><fA11 i1="02" i2="1"><s1>LEE (R. T.)</s1></fA11><fA11 i1="03" i2="1"><s1>SHURTLEFF (J. K.)</s1></fA11><fA11 i1="04" i2="1"><s1>STRINGFELLOW (G. B.)</s1></fA11><fA11 i1="05" i2="1"><s1>LEE (S. M.)</s1></fA11><fA11 i1="06" i2="1"><s1>SEONG (T. Y.)</s1></fA11><fA14 i1="01"><s1>College of Engineering, University of Utah, Salt Lake City, Utah 84112</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></fA14><fA14 i1="02"><s1>Kwanju Institute of Science and Technology, Kwanju 500-712, Korea</s1><sZ>5 aut.</sZ><sZ>6 aut.</sZ></fA14><fA20><s1>1440-1442</s1></fA20><fA21><s1>2000-03-13</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>10020</s2></fA43><fA44><s0>8100</s0><s1>© 2000 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>00-0113386</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Applied physics letters</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>A surfactant is used to induce an ordered structure in an epitaxial layer. 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